2N2951
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Small signal transistors. VCBO (V) VCEO (V)
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2N2950 - NPN Transistor
(Motorola)
2N2949 (SILICON) 2N29S0
NPN silicon annular transistors for power amplifier and driver applications to 100 MHz.
(TO·l07) 2N2949
2N2950
Collector c.
2N2951 - NPN Transistor
(Motorola)
2N2951 (SILICON) 2N2952
CASE 31 (TO·5)
2N2951
CME~ (TO·l8) 2N2952
Collector connected to case
NPN silicon annular Star transistors for power ampli.
2N2952 - NPN Transistor
(Motorola)
2N2951 (SILICON) 2N2952
CASE 31 (TO·5)
2N2951
CME~ (TO·l8) 2N2952
Collector connected to case
NPN silicon annular Star transistors for power ampli.
2N2952 - Small Signal Transistors
(Central Semiconductor)
Small Signal Transistors TO-18 Case (Continued)
TYPE NO.
DESCRIPTION
BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V)
MIN MIN MIN MAX *ICES **ICEV.
2N2955 - SILICON PNP TRANSISTOR
(Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD
2N2955
PNP SILICON TRANSISTOR
SILICON PNP TRANSISTORS
DESCRIPTION
The UTC 2N2955 is a silicon PNP transistor in T.
2N2955 - PNP Transistor
(Motorola)
2N2955 (GERMANIUM) 2N2956 2N2957
CASE12(\~ (TO.18)Z \ \ Collector connected to case
PNP germanium epitaxial mesa transistors for highspeed switching.
2N2955 - PNP EPITAXIAL PLANAR TRANSISTOR
(Dc Components)
DC COMPONENTS CO., LTD.
R
2N2955
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for powe.
2N2955 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volt.
2N2955HV - Silicon PNP Power Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N2955HV
DESCRIPTION ·Excellent Safe Operating Area ·DC Current G.
2N2956 - PNP Transistor
(Motorola)
2N2955 (GERMANIUM) 2N2956 2N2957
CASE12(\~ (TO.18)Z \ \ Collector connected to case
PNP germanium epitaxial mesa transistors for highspeed switching.
