2N2949 (SILICON) 2N29S0 NPN silicon annular transistors for power amplifier and driver applications to 100 MHz.
(TO l07) 2N2949 2N2950 Collector connected to case; stud isolated from case MAXIMUM RATINGS- ~~ting Symbol Value Unit Collector- Base 'V()ltage Collector-Emitter Voltage Emitter - Base Voltage Collector Current (Continuous) Base Current (Continuous) RF Input Power (Nom) RF Output Power (Nom) Total Device Dissipation (2S0C Case temperature) (Derating Factor above 25°C) Tot
