2N2955HV Silicon PNP Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N2955HV .
Excellent Safe Operating Area. DC Current Gain- : hFE=20-70@IC= -4A. Collector-Emitter Saturation Voltage- : VCE(sat)= -1.

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Datasheet Specifications

Part number: 2N2955HV
Manufacturer: Inchange Semiconductor
File Size: 100.60 KB
Datasheet: 2N2955HV-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCER VCEO Collector-Emitter Voltage Collector-Emitter Voltage -100 -100 V V VEBO Emitter-Base Voltage -7 V IC Collect

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2N2955HV Silicon PNP Power Transistor Inchange Semiconductor

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