2N2955HV Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2N2955HV

Manufacturer:

Inchange Semiconductor

File Size:

100.60kb

Download:

📄 Datasheet

Description:

Silicon pnp power transistor.

  • Excellent Safe Operating Area
  • DC Current Gain- : hFE=20-70@IC= -4A
  • Collector-Emitter Saturation Voltage- :

  • Datasheet Preview: 2N2955HV 📥 Download PDF (100.60kb)
    Page 2 of 2N2955HV

    2N2955HV Application

    • Applications
    • Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

    TAGS

    2N2955HV
    Silicon
    PNP
    Power
    Transistor
    Inchange Semiconductor

    📁 Related Datasheet

    2N2955 - SILICON PNP TRANSISTOR (Unisonic Technologies)
    UNISONIC TECHNOLOGIES CO., LTD 2N2955 PNP SILICON TRANSISTOR SILICON PNP TRANSISTORS  DESCRIPTION The UTC 2N2955 is a silicon PNP transistor in T.

    2N2955 - PNP Transistor (Motorola)
    2N2955 (GERMANIUM) 2N2956 2N2957 CASE12(\~ (TO.18)Z \ \ Collector connected to case PNP germanium epitaxial mesa transistors for highspeed switching.

    2N2955 - PNP EPITAXIAL PLANAR TRANSISTOR (Dc Components)
    DC COMPONENTS CO., LTD. R 2N2955 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for powe.

    2N2955 - PNP Transistor (INCHANGE)
    isc Silicon PNP Power Transistors DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volt.

    2N2950 - NPN Transistor (Motorola)
    2N2949 (SILICON) 2N29S0 NPN silicon annular transistors for power amplifier and driver applications to 100 MHz. (TO·l07) 2N2949 2N2950 Collector c.

    2N2951 - NPN Transistor (Motorola)
    2N2951 (SILICON) 2N2952 CASE 31 (TO·5) 2N2951 CME~ (TO·l8) 2N2952 Collector connected to case NPN silicon annular Star transistors for power ampli.

    2N2951 - Small Signal Transistors (Central)
    Small Signal Transistors TO-39 Case (Continued) TYPE NO. DESCRIPTION VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICE.

    2N2952 - NPN Transistor (Motorola)
    2N2951 (SILICON) 2N2952 CASE 31 (TO·5) 2N2951 CME~ (TO·l8) 2N2952 Collector connected to case NPN silicon annular Star transistors for power ampli.

    2N2952 - Small Signal Transistors (Central Semiconductor)
    Small Signal Transistors TO-18 Case (Continued) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV.

    2N2956 - PNP Transistor (Motorola)
    2N2955 (GERMANIUM) 2N2956 2N2957 CASE12(\~ (TO.18)Z \ \ Collector connected to case PNP germanium epitaxial mesa transistors for highspeed switching.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts