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1N5529B, 1N5518B SILICON ZENER DIODES

1N5529B Description

1N5518B THRU 1N5546B SILICON ZENER DIODES 400mW, 3.3 THRU 33 VOLT ±5% TOLERANCE w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR 1N5518B series silicon Zener diode is designed for low leakage, low current, and low noise applications.

1N5529B Applications

* MARKING: FULL PART NUMBER DO-35 CASE MAXIMUM RATINGS: (TA=25°C) Power Dissipation Operating and Storage Junction Temperature SYMBOL PD TJ, Tstg 400 -65 to +200 UNITS mW °C ELECTRICAL CHARACTERISTICS: (TA=25°C) VF=1.1V MAX @ IF=200mA (for all types) Type Zener Voltage VZ @ IZT MIN NOM MAX

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This datasheet PDF includes multiple part numbers: 1N5529B, 1N5518B. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
1N5529B, 1N5518B
Manufacturer
Central Semiconductor ↗
File Size
130.14 KB
Datasheet
1N5518B-CentralSemiconductor.pdf
Description
SILICON ZENER DIODES
Note
This datasheet PDF includes multiple part numbers: 1N5529B, 1N5518B.
Please refer to the document for exact specifications by model.

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SILICON ZENER DIODES Central Semiconductor
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