Datasheet Details
| Part number | GFP4N60 |
|---|---|
| Manufacturer | Chinahaiso electronic |
| File Size | 43.05 KB |
| Description | N-channel enhancement mode power field effect Transistors |
| Datasheet |
 GFP4N60-Chinahaisoelectronic.pdf
|
| Part number | GFP4N60 |
|---|---|
| Manufacturer | Chinahaiso electronic |
| File Size | 43.05 KB |
| Description | N-channel enhancement mode power field effect Transistors |
| Datasheet |
GFP4N60-Chinahaisoelectronic.pdf
|
These N-channel enhancement mode power field effect Transistors are produced using planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.These devices are well suited for high efficiency switch mode power supply.Absolute maximum ratings T=25℃ unless otherwise noted Characteristics Symbol Drain-SourceVoltage
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