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GFP4N60 Datasheet - Chinahaiso electronic

GFP4N60 - N-channel enhancement mode power field effect Transistors

* These N-channel enhancement mode power field effect Transistors are produced using planar stripe DMOS technology.

* This advanced technology has been especially tailored to minimize on-state resistance provide superior switching performance, and withstand high energy pulse in the avalanche

GFP4N60-Chinahaisoelectronic.pdf

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Datasheet Details

Part number:

GFP4N60

Manufacturer:

Chinahaiso electronic

File Size:

43.05 KB

Description:

N-channel enhancement mode power field effect transistors.

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