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GFP50N06 Datasheet - Chinahaiso electronic

GFP50N06 MOSFET

GFP50N06 Features

* () Low RD s (on) (0.023 Ω)@Vgs=10V Low Gate Charge (Typical 39 nC) Low Crss (typical 110 pF) Maximum Junction Temperature range (175 ℃) Absolute maximum ratings Characteristics T=25℃ unless otherwise noted Symbol BV DSS ID V GS E AS PD T STG Rθ JC V SD Value 60 50 ±20 470 130 -55

* 175 1.1

GFP50N06-Chinahaisoelectronic.pdf

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Datasheet Details

Part number:

GFP50N06

Manufacturer:

Chinahaiso electronic

File Size:

117.61 KB

Description:

Mosfet.

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