GFP50N03 Datasheet - General Semiconductor

GFP50N03 - N-Channel Enhancement-Mode MOSFET

GFP50N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® VDS 30V RDS(ON) 13mΩ ID 50A D TO-220AB 0.415 (10.54) Max.

0.154 (3.91) 0.142 (3.60)Dia.

0.113 (2.87) 0.102 (2.56) 0.155 (3.93) D 0.134 (3.40) 0.410 (10.41) 0.350 (8.89) PIN G DS 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39) G

GFP50N03 Features

* S

* Advanced Process Technology

* High Density Cell Design for Ultra Low On-Resistance

* Specially Designed for Low Voltage DC/DC Converters

* Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.205 (5.20) 0.190 (4.83) 0.105 (2.67) 0.0

GFP50N03-GeneralSemiconductor.pdf