CED830G - N-Channel MOSFET
CED830G Features
* 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED830G/CEU830G PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSO
