CED830G Features
* 500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED830G/CEU830G PRELIMINARY D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSO
CED830G_Chino-ExcelTechnology.pdf
Datasheet Details
CED830G, CED830G_Chino
Chino-Excel Technology
417.21 KB
N-channel mosfet.
This datasheet PDF includes multiple part numbers: CED830G, CED830G_Chino.
Please refer to the document for exact specifications by model.
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