CED83A3G
Chino-Excel Technology
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N-channel mosfet.
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CED83A3 - N-Channel MOSFET
(CET)
CED83A3/CEU83A3
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high .
CED830G - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
500V, 4.5A, RDS(ON) = 1.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(.
CED840A - N-Channel MOSFET
(CET)
CED840A/CEU840A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
500V, 7.5A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense ce.
CED840G - N-Channel MOSFET
(CET)
CED840G/CEU840G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
500V, 7A, RDS(ON) = 0.85Ω @VGS = 10V. Super high dense cell.
CED84A4 - N-Channel MOSFET
(CET)
CED84A4/CEU84A4
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 80A, RDS(ON) = 5.1mΩ @VGS = 10V. RDS(ON) = 7.8mΩ @VGS = 4.5V.
Super.
CED85A3 - N-Channel MOSFET
(CET)
CED85A3/CEU85A3
N-Channel Enhancement Mode Field Effect Transistor FEATURES
25V, 80A, RDS(ON) = 6mΩ @VGS = 10V. RDS(ON) = 9mΩ @VGS = 4.5V. Super high .
CED01N6 - N-Channel MOSFET
(CET)
CED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex.
CED01N65 - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS.
CED01N65A - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15Ω @VGS = 10V. Super high dense cell design for extremely low RDS(O.
CED01N6G - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
600V, 1A, RDS(ON) = 9.3Ω @VGS = 10V. High power and current handing capability. Lead free .
