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HYG053N10NS1V

N-Channel MOSFET

HYG053N10NS1V General Description


* 100V/95A RDS(ON)=5.2mΩ(typ.)@VGS = 10V
* 100% Avalanche Tested
* Reliable and Rugged
* Halogen-Free DevicesAvailable (RoHS Compliant) ek HYG053N10NS1D/U/V Applications
* Switching Application T
* Motor control and drive
* Battery management G DS TO-252-2L G DS T.

HYG053N10NS1V Datasheet (586.95 KB)

Preview of HYG053N10NS1V PDF

Datasheet Details

Part number:

HYG053N10NS1V

Manufacturer:

ChipSourceTek

File Size:

586.95 KB

Description:

N-channel mosfet.

📁 Related Datasheet

HYG053N10NS1B - N-Channel MOSFET (HUAYI)
HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH.

HYG053N10NS1C2 - N-Channel Enhancement Mode MOSFET (ChipSourceTek)
N-Channel Enhancement Mode MOSFET HYG053N10NS1C2 Feature HYG053N10NS1C2 Pin Description  100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V DDDD DDDD  10.

HYG053N10NS1D - N-Channel MOSFET (ChipSourceTek)
HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG.

HYG053N10NS1P - N-Channel MOSFET (HUAYI)
HYG053N10NS1P/B Feature  100V/120A RDS(ON)=4.8 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoH.

HYG053N10NS1U - N-Channel MOSFET (ChipSourceTek)
HYG053N10NS1D/U/V N-Channel Enhancement Mode MOSFET HYG053N10NS1D/U/V Feature HYG053N10NS1D/U/V Pin Description  100V/95A RDS(ON)=5.2mΩ(typ.)@VG.

HYG006N04LS1B6 - Single N-Channel Enhancement Mode MOSFET (HUAYI)
HYG006N04LS1B6 Single N-Channel Enhancement Mode MOSFET Feature  40V/530A RDS(ON)= 0.55mΩ(typ.) @VGS = 10V RDS(ON)=0.72 mΩ(typ.)@VGS = 4.5V  100% .

HYG010N06NS1TA - N-Channel Enhancement Mode MOSFET (HUAYI)
HYG010N06NS1TA Feature  60V/465A RDS(ON)=0.75 mΩ(typ.)@VGS = 10V  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS.

HYG013N03LS1C2 - Single N-Channel MOSFET (HUAYI)
HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description  30V/150A RDS(ON)= 1.3mΩ (typ.) @VGS = 10V RDS(ON)= 2.0mΩ (typ.) @VGS =.

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HYG053N10NS1V N-Channel MOSFET ChipSourceTek

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