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HYG053N10NS1C2 - N-Channel Enhancement Mode MOSFET

General Description

100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V DDDD DDDD 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) k HYG053N10NS1C2 Applications e Switching application Power management for inverter systems T Battery manage

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Datasheet Details

Part number HYG053N10NS1C2
Manufacturer ChipSourceTek
File Size 542.84 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HYG053N10NS1C2 Datasheet

Full PDF Text Transcription (Reference)

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N-Channel Enhancement Mode MOSFET HYG053N10NS1C2 Feature HYG053N10NS1C2 Pin Description  100V/95A RDS(ON)=4.6 mΩ(typ.)@VGS = 10V DDDD DDDD  100% Avalanche Tested  Reliable and Rugged  Halogen-Free Devices Available (RoHS Compliant) k HYG053N10NS1C2 Applications e  Switching application  Power management for inverter systems T  Battery management SSSG Pin1 GSSS PDFN5*6-8L rceN-ChannelMOSFET u HYG053N10NS1C2 Ordering and Marking Information So C2 G053N10 ip XYMXXXXXX Package Code C2 : PDFN5*6-8L Date Code XYMXXXXXX Ch Note: This lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi- Nation finish;which are fully compliant with RoHS.