MXN3016M - N-Channel Power MOSFET

ChipSourceTek

Datasheet Details

The MXN3016M uses advanced trench technology to provide excellent RDS(ON) and low gate charge .

SchemSatic Schematic diagram.
VDS =30V，ID =45A.
@VGS=10V RDS(ON)(Typ. )=5mΩ.
@VGS=4.5V RDS(ON)(Typ. )=7mΩ k High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Good stability and uniformity with high EAS e Excellent package for good heat dissipation Special process technology for high ESD capability eT.

📁 MXN3016M Similar Datasheet

Other Datasheets by ChipSourceTek

Published: Jan 7, 2024 |