MXN3060 - N-Channel Enhancement Mode Power MOSFET
MXN3060 Features
* VDS = 30V,ID = 80 A RDS(ON) (Typ.)5.0mΩ @ VGS=10V RDS(ON) (Typ.)6mΩ @ VGS=-4.5V k Low density cell desig e Fully characterized avalanche voltage T and current Good stability and uniformity with high EAS e Excellent package for good heat dissipation P30100G c Application r Power switching appli