MXN3050G - N-Channel Enhancement Mode Power MOSFET
MXN3050G Features
* VDS = 30V,ID = 50 A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=-4.5V k Low density cell desig e Fully characterized avalanche voltage T and current Good stability and uniformity with high EAS e Excellent package for good heat dissipation c Application r Power switching application u Hard swit