MXN3382 - Dual N-Channel Enhancement Mode Power MOSFET
MXN3382 Features
* Schematic diagram
* VDS =18V，ID =22A
* @VGS=4.5V RDS(ON)(Typ.)=4.5mΩ xxxxx
* @VGS=3.8V RDS(ON)(Typ.)=4.7mΩ
* @VGS=2.5V RDS(ON)(Typ.)=6mΩ ESD Rating: 2000V HBM k High Power and current handing capability Lead free product is acquired e Surface Mount Package Marking and pin Assig
