MXN3388L - Dual N-Channel Enhancement Mode Power MOSFET
MXN3388L Features
* APPLICATION
* VDS=20V, ID=8A RDS(ON)(Typ.)=15.5mΩ @ VGS=2.5V RDS(ON)(Typ.)=10.6mΩ @ VGS=3.8V RDS(ON)(Typ.)=10mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High density cell design for ultra low
* Power switching application
* Hard Switched and High Frequency Circuits
* Uninterruptible
