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1N5819-G - Schottky Barrier Rectifiers

This page provides the datasheet information for the 1N5819-G, a member of the 1N5817-G Schottky Barrier Rectifiers family.

Datasheet Summary

Features

  • -Metal-Semiconductor junction with guard ring. -Epitaxial construction. -Low forward voltage drop. -High current capability. -For use in low voltage, high frequency inverters, free wheeling, and polarity protection.

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Datasheet preview – 1N5819-G

Datasheet Details

Part number 1N5819-G
Manufacturer Comchip
File Size 90.96 KB
Description Schottky Barrier Rectifiers
Datasheet download datasheet 1N5819-G Datasheet
Additional preview pages of the 1N5819-G datasheet.

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Full PDF Text Transcription

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Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device Features -Metal-Semiconductor junction with guard ring. -Epitaxial construction. -Low forward voltage drop. -High current capability. -For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Mechanical data -Case: JEDEC DO-41 molded plastic -Epoxy: UL 94V-0 rate flame retardant -Polarity: Color band denotes cathode -Mounting position: Any -Weight: 0.012 once, 0.34 grams DO-41 1.000(25.40) Min. 0.034(0.90) DIA. 0.028(0.70) 0.205(5.20) 0.165(4.20) 1.000(25.40) Min. 0.107(2.70) DIA. 0.080(2.
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