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1N5819-G - Schottky Barrier Rectifiers

Download the 1N5819-G datasheet PDF. This datasheet also covers the 1N5817-G variant, as both devices belong to the same schottky barrier rectifiers family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • -Metal-Semiconductor junction with guard ring. -Epitaxial construction. -Low forward voltage drop. -High current capability. -For use in low voltage, high frequency inverters, free wheeling, and polarity protection.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (1N5817-G-Comchip.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 1N5819-G
Manufacturer Comchip
File Size 90.96 KB
Description Schottky Barrier Rectifiers
Datasheet download datasheet 1N5819-G Datasheet

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Other Datasheets by Comchip

Part Number Description
1N5817-G Schottky Barrier Rectifiers
1N5818-G Schottky Barrier Rectifiers
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1N5222B-G Glass Silicon Zener Diode
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Schottky Barrier Rectifiers 1N5817-G Thru. 1N5819-G Reverse Voltage: 20 to 40 V Forward Current: 1.0 A RoHS Device Features -Metal-Semiconductor junction with guard ring. -Epitaxial construction. -Low forward voltage drop. -High current capability. -For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Mechanical data -Case: JEDEC DO-41 molded plastic -Epoxy: UL 94V-0 rate flame retardant -Polarity: Color band denotes cathode -Mounting position: Any -Weight: 0.012 once, 0.34 grams DO-41 1.000(25.40) Min. 0.034(0.90) DIA. 0.028(0.70) 0.205(5.20) 0.165(4.20) 1.000(25.40) Min. 0.107(2.70) DIA. 0.080(2.