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CDBGBSC101200-G

Dual Silicon Carbide Power Schottky Diode

CDBGBSC101200-G Features

* - Rated to 1200 at 10 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(4) A(1) A(3) C(2) 0.244(6.20) 0.213(5.40) 0.845(21.46)

CDBGBSC101200-G Datasheet (69.28 KB)

Preview of CDBGBSC101200-G PDF

Datasheet Details

Part number:

CDBGBSC101200-G

Manufacturer:

Comchip

File Size:

69.28 KB

Description:

Dual silicon carbide power schottky diode.

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CDBGBSC101200-G Dual Silicon Carbide Power Schottky Diode Comchip

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