Datasheet Specifications
- Part number
- CDBGBSC101200-G
- Manufacturer
- Comchip
- File Size
- 69.28 KB
- Datasheet
- CDBGBSC101200-G-Comchip.pdf
- Description
- Dual Silicon Carbide Power Schottky Diode
Description
Dual Silicon Carbide Power Schottky Diode CDBGBSC101200-G Reverse Voltage: 1200V Forward Current: 10A RoHS Device .
Features
* - Rated to 1200 at 10 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(4) A(1) A(3) C(2) 0.244(6.20) 0.213(5.40) 0.845(21.46)CDBGBSC101200-G Distributors
📁 Related Datasheet
📌 All Tags