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CDBGBSC20650-G Dual Silicon Carbide Power Schottky Diode

CDBGBSC20650-G Description

Dual Silicon Carbide Power Schottky Diode CDBGBSC20650-G Reverse Voltage: 650V Forward Current: 20A RoHS Device .

CDBGBSC20650-G Features

* - Rated to 650V at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(4) A(1) A(3) C(2) 0.244(6.20) 0.213(5.40) 0.845(21.46)

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Datasheet Details

Part number
CDBGBSC20650-G
Manufacturer
Comchip
File Size
70.65 KB
Datasheet
CDBGBSC20650-G-Comchip.pdf
Description
Dual Silicon Carbide Power Schottky Diode

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Dual Silicon Carbide Power Schottky Diode Comchip
Comchip CDBGBSC20650-G-like datasheet