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CDBGBSC201200-G Dual Silicon Carbide Power Schottky Diode

CDBGBSC201200-G Description

Dual Silicon Carbide Power Schottky Diode CDBGBSC201200-G Reverse Voltage: 1200V Forward Current: 20A RoHS Device .

CDBGBSC201200-G Features

* - Rated to 1200 at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26)

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Datasheet Details

Part number
CDBGBSC201200-G
Manufacturer
Comchip
File Size
70.09 KB
Datasheet
CDBGBSC201200-G-Comchip.pdf
Description
Dual Silicon Carbide Power Schottky Diode

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Dual Silicon Carbide Power Schottky Diode Comchip
Comchip CDBGBSC201200-G-like datasheet