Datasheet4U Logo Datasheet4U.com

CDBGBSC201200-G

Dual Silicon Carbide Power Schottky Diode

CDBGBSC201200-G Features

* - Rated to 1200 at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26)

CDBGBSC201200-G Datasheet (70.09 KB)

Preview of CDBGBSC201200-G PDF

Datasheet Details

Part number:

CDBGBSC201200-G

Manufacturer:

Comchip

File Size:

70.09 KB

Description:

Dual silicon carbide power schottky diode.

📁 Related Datasheet

CDBGBSC20650-G Dual Silicon Carbide Power Schottky Diode (Comchip)

CDBGBSC101200-G Dual Silicon Carbide Power Schottky Diode (Comchip)

CDBG820-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode (Comchip Technology)

CDBG830-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode (Comchip Technology)

CDBG840-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode (Comchip Technology)

CDBG850-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode (Comchip Technology)

CDBG860-G (CDBG820-G - CDBG860-G) SMD Schottky Barrier Diode (Comchip Technology)

CDB0130QRM Schottky Barrier Diode (Crownpo)

CDB0130QRM Schottky Barrier Diode (msksemi)

CDB0230M Chip Schottky Barrier Diode (MAYLOON)

TAGS

CDBGBSC201200-G Dual Silicon Carbide Power Schottky Diode Comchip

Image Gallery

CDBGBSC201200-G Datasheet Preview Page 2

CDBGBSC201200-G Distributor