CDBGBSC201200-G Dual Silicon Carbide Power Schottky Diode

Comchip

Description

Dual Silicon Carbide Power Schottky Diode CDBGBSC201200-G Reverse Voltage: 1200V Forward Current: 20A RoHS Device .

📥 Download Datasheet

CDBGBSC201200-G Datasheet Preview — Preview of CDBGBSC201200-G PDF

Datasheet Specifications

Part number: CDBGBSC201200-G
Manufacturer: Comchip
File Size: 70.09 KB
Datasheet: CDBGBSC201200-G-Comchip.pdf
Description: Dual Silicon Carbide Power Schottky Diode

Features

* - Rated to 1200 at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26)

CDBGBSC201200-G Distributors

📁 Related Datasheet

CDBG820-G CDBG830-G CDBG840-G CDBG850-G CDBG860-G CDB0130QRM

📌 All Tags

CDBGBSC201200-G Dual Silicon Carbide Power Schottky Diode Comchip

Comchip CDBGBSC201200-G-like datasheet