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CDBJSC101200-G Datasheet - Comchip

CDBJSC101200-G Silicon Carbide Power Schottky Diode

CDBJSC101200-G Features

* - Rated to 1200V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 0.116(2.95) 0.104(2.65)

CDBJSC101200-G-Comchip.pdf

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Datasheet Details

Part number:

CDBJSC101200-G

Manufacturer:

Comchip

File Size:

108.63 KB

Description:

Silicon carbide power schottky diode.

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CDBJSC101200-G CDBJSC101200-G Silicon Carbide Power Schottky Diode Comchip

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