CDBJSC101200-G Datasheet - Comchip

datasheet Preview Page 1 from Datasheet4u.com

CDBJSC101200-G Silicon Carbide Power Schottky Diode

Silicon Carbide Power Schottky Diode CDBJSC101200-G Reverse Voltage: 1200 V Forward Current: 10 A RoHS Device .

CDBJSC101200-G-Comchip.pdf

CDBJSC101200-G Datasheet Preview — Preview of CDBJSC101200-G PDF

Datasheet Details

Part number:

CDBJSC101200-G

Manufacturer:

Comchip

File Size:

108.63 KB

Description:

Silicon Carbide Power Schottky Diode

Features

* - Rated to 1200V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 0.116(2.95) 0.104(2.65)

CDBJSC101200-G Distributors

📁 Related Datasheet

CDB0130QRM CDB0230M CDB455C10 CDB455C13A CDB455C16 CDB455C21

📌 All Tags

CDBJSC101200-G Silicon Carbide Power Schottky Diode Comchip

Comchip CDBJSC101200-G-like datasheet