CDBJSC8650-G Datasheet - Comchip

CDBJSC8650-G - Silicon Carbide Power Schottky Diode

CDBJSC8650-G Features

* - Rated to 650V at 8 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 0.116(2.95) 0.104(2.65) 0

CDBJSC8650-G-Comchip.pdf

CDBJSC8650-G Datasheet Preview — Preview of CDBJSC8650-G PDF

Datasheet Details

Part number:

CDBJSC8650-G

Manufacturer:

Comchip

File Size:

109.43 KB

Description:

Silicon carbide power schottky diode.

CDBJSC8650-G Distributor

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CDBJSC8650-G Silicon Carbide Power Schottky Diode Comchip