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CDBJSC10650-G Silicon Carbide Power Schottky Diode

CDBJSC10650-G Description

Silicon Carbide Power Schottky Diode CDBJSC10650-G Reverse Voltage: 650 V Forward Current: 10 A RoHS Device .

CDBJSC10650-G Features

* - Rated to 650V at 10 Amps - Short recovery time. - High speed switching possible. - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF. Circuit diagram K(3) K(1) A(2) TO-220-2 0.116(2.95) 0.104(2.65)

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Datasheet Details

Part number
CDBJSC10650-G
Manufacturer
Comchip
File Size
109.33 KB
Datasheet
CDBJSC10650-G-Comchip.pdf
Description
Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode Comchip
Comchip CDBJSC10650-G-like datasheet