BDY23 Datasheet, Transistors, Comset Semiconductor

PDF File Details

Part number:

BDY23

Manufacturer:

Comset Semiconductor

File Size:

296.07kb

Download:

📄 Datasheet

Description:

(bdy23 - bdy25)npn silicon transistors.

Datasheet Preview: BDY23 📥 Download PDF (296.07kb)
Page 2 of BDY23 Page 3 of BDY23

TAGS

BDY23
BDY23
BDY25NPN
SILICON
TRANSISTORS
Comset Semiconductor

📁 Related Datasheet

BDY20 - Bipolar NPN Device (Seme LAB)
BDY20 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY20 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage.

BDY23 - Bipolar NPN Device (Seme LAB)
BDY23 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY23 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BDY23 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage.

BDY23A - Bipolar NPN Device (Seme LAB)
BDY23A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

BDY23B - Bipolar NPN Device (Seme LAB)
BDY23B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

BDY23C - Bipolar NPN Device (Seme LAB)
BDY23C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

BDY24 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.

BDY24 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BDY24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage.

BDY24B - Bipolar NPN Device (Seme LAB)
BDY24B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts