.
Seme LAB
BDY25B - HIGH CURRENT NPN SILICON TRANSISTOR
BDY25B MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1 2 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 .
Inchange Semiconductor
BDY25B - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltage- : VC.
Comset Semiconductor
BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.
Comset Semiconductor
BDY25 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.
Seme LAB
BDY25 - Bipolar NPN Device
BDY25 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .
Seme LAB
BDY25C - Bipolar NPN Device
BDY25C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.
Comset Semiconductor
BDY24 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.
Seme LAB
BDY25A - HIGH CURRENT NPN SILICON TRANSISTOR
BDY25A MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) .
INCHANGE
BDY25 - NPN Transistor
isc Silicon NPN Power Transistor BDY25 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) ·Collector-Emitter Saturation Voltag.
