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BDY25B Datasheet - Inchange Semiconductor

BDY25B Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min.) *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A *High Switching Speed *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for LF signal powe .

BDY25B-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BDY25B

Manufacturer:

Inchange Semiconductor

File Size:

207.22 KB

Description:

Silicon npn power transistor.

BDY25B Distributor

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BDY25B BDY25B Silicon NPN Power Transistor Inchange Semiconductor