Datasheet4U Logo Datasheet4U.com

BDY25B Silicon NPN Power Transistor

📥 Download Datasheet  Datasheet Preview Page 1

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 0. High S.

📥 Download Datasheet

Preview of BDY25B PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
BDY25B
Manufacturer
Inchange Semiconductor
File Size
207.22 KB
Datasheet
BDY25B-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

Applications

* Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A

BDY25B Distributors

📁 Related Datasheet

  • BDY25 - Bipolar NPN Device (Seme LAB)
  • BDY25A - HIGH CURRENT NPN SILICON TRANSISTOR (Seme LAB)
  • BDY25C - Bipolar NPN Device (Seme LAB)
  • BDY20 - Bipolar NPN Device (Seme LAB)
  • BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
  • BDY23A - Bipolar NPN Device (Seme LAB)

📌 All Tags

Inchange Semiconductor BDY25B-like datasheet