BDY25B Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 0. High S.

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Datasheet Specifications

Part number: BDY25B
Manufacturer: Inchange Semiconductor
File Size: 207.22 KB
Datasheet: BDY25B-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A

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BDY25B Silicon NPN Power Transistor Inchange Semiconductor

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