BDY54 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1. Hig.

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Datasheet Specifications

Part number: BDY54
Manufacturer: Inchange Semiconductor
File Size: 206.03 KB
Datasheet: BDY54_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 12 A IB Base

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BDY54 Silicon NPN Power Transistor Inchange Semiconductor

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