Datasheet4U Logo Datasheet4U.com

BDY57 - NPN Transistor

Datasheet Summary

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

LF signal power amplification.

High current fast switching

📥 Download Datasheet

Datasheet preview – BDY57

Datasheet Details

Part number BDY57
Manufacturer INCHANGE
File Size 202.88 KB
Description NPN Transistor
Datasheet download datasheet BDY57 Datasheet
Additional preview pages of the BDY57 datasheet.

📁 Similar Datasheet

  • BDY57 - SILICON POWER TRANSISTOR (SavantIC)
  • BDY57 - Bipolar NPN Device (Seme LAB)
  • BDY57 - NPN SILICON TRANSISTORS (Comset Semiconductors)
  • BDY53 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BDY53 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
  • BDY54 - Bipolar NPN Device (Seme LAB)
  • BDY54 - SILICON NPN TRANSISTOR (TT)
  • BDY54 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
  • BDY54 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BDY55 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·High Power Dissipation ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF signal power amplification.
Published: |