Datasheet4U Logo Datasheet4U.com

BDY28 Datasheet, Transistor, INCHANGE

✔ BDY28 Application

PDF File Details

Manufacture Logo for INCHANGE
INCHANGE manufacturer logo

Part number:

BDY28

Manufacturer:

INCHANGE

File Size:

207.46kb

Download:

📄 Datasheet

Description:

Npn transistor. *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min.) *Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(Max)@ IC = 2A *H

Datasheet Preview: BDY28 📥 Download PDF (207.46kb)
Page 2 of BDY28

TAGS

BDY28
NPN
Transistor
INCHANGE

📁 Related Datasheet

BDY20 - Bipolar NPN Device (Seme LAB)
BDY20 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY20 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage.

BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.

BDY23 - Bipolar NPN Device (Seme LAB)
BDY23 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY23 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BDY23 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage.

BDY23A - Bipolar NPN Device (Seme LAB)
BDY23A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

BDY23B - Bipolar NPN Device (Seme LAB)
BDY23B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

BDY23C - Bipolar NPN Device (Seme LAB)
BDY23C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

BDY24 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.

BDY24 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BDY24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage.

Since 2006. D4U Semicon. Datasheet4U.com Contact Us Privacy Policy Purchase of parts