BDY38 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V (Min). Wide area of safe operation. 100% avalanche tested. Minimum Lot-to-Lot va.

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Datasheet Specifications

Part number: BDY38
Manufacturer: INCHANGE
File Size: 198.10 KB
Datasheet: BDY38-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC PC TJ Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation J

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BDY38 NPN Transistor INCHANGE

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