BDY13
Siemens Semiconductor Group
234.73kb
Npn silicon planar trnasistors.
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BDY10 - Silicon NPN Transistor
(Valvo)
OEM:Valvo
Transistor BDY11
Datasheet
Silicon NPN Transistor BDY11
100V / 4A
DATASHEET
OEM – Valvo
Source: Valvo Datenbuch1967
Datasheet Rev. 1.3.
BDY11 - Silicon NPN Transistor
(Valvo)
OEM:Valvo
Transistor BDY11
Datasheet
Silicon NPN Transistor BDY11
100V / 4A
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Source: Valvo Datenbuch1967
Datasheet Rev. 1.3.
BDY12 - NPN Silicon Planar Trnasistors
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BDY13-6 - Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Volta.
BDY20 - Bipolar NPN Device
(Seme LAB)
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Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
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BDY20 - Silicon NPN Power Transistor
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DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain
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BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
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BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABS.
BDY23 - Bipolar NPN Device
(Seme LAB)
BDY23
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
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BDY23 - Silicon NPN Power Transistor
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DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage.
BDY23A - Bipolar NPN Device
(Seme LAB)
BDY23A
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
