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BDY13-6 - Silicon NPN Power Transistor

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Datasheet Details

Part number
BDY13-6
Manufacturer
Inchange Semiconductor
File Size
207.54 KB
Datasheet
download datasheet BDY13-6-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

BDY13-6 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max)@ IC = 3A High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation

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