BDY13-6 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BDY13-6 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max)@ IC = 3A. High Swit.

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Datasheet Specifications

Part number: BDY13-6
Manufacturer: Inchange Semiconductor
File Size: 207.54 KB
Datasheet: BDY13-6-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current 0.3 A

BDY13-6 Distributors

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BDY13-6 Silicon NPN Power Transistor Inchange Semiconductor

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