BDY13-6 Datasheet, Transistor, Inchange Semiconductor

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BDY13-6

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Inchange Semiconductor

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📄 Datasheet

Description:

Silicon npn power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.)

Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max

BDY13-6 Application

• Applications
• Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C

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BDY13-6

Inchange Semiconductor

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