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BDY13-6 Datasheet - Inchange Semiconductor

BDY13-6 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1V(Max)@ IC = 3A *High Switching Speed *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for LF signal powe ampl.

BDY13-6-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BDY13-6

Manufacturer:

Inchange Semiconductor

File Size:

207.54 KB

Description:

Silicon npn power transistor.

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BDY13-6 BDY13-6 Silicon NPN Power Transistor Inchange Semiconductor

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