BDY55X Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BDY55X .
Excellent Safe Operating Area. DC Current Gain- : hFE=20-100@IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

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Datasheet Specifications

Part number: BDY55X
Manufacturer: Inchange Semiconductor
File Size: 207.40 KB
Datasheet: BDY55X-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base

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BDY55X Silicon NPN Power Transistor Inchange Semiconductor

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