BDY55X Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

BDY55X

Manufacturer:

Inchange Semiconductor

File Size:

207.40kb

Download:

📄 Datasheet

Description:

Silicon npn power transistor.

  • Excellent Safe Operating Area
  • DC Current Gain- : hFE=20-100@IC = 4A
  • Collector-Emitter Saturation Voltage-

  • Datasheet Preview: BDY55X 📥 Download PDF (207.40kb)
    Page 2 of BDY55X

    BDY55X Application

    • Applications
    • Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

    TAGS

    BDY55X
    Silicon
    NPN
    Power
    Transistor
    Inchange Semiconductor

    📁 Related Datasheet

    BDY55 - SILICON POWER TRANSISTOR (SavantIC)
    SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BDY55 .. DESCRIPTION ·With TO-3 package ·High current.

    BDY55 - Bipolar NPN Device (Seme LAB)
    BDY55 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

    BDY55 - (BDY55 / BDY56) NPN SILICON TRANSISTORS (Comset Semiconductors)
    BDY55 – BDY56 NPN SILICON TRANSISTORS, DIFFUSED MESA The BDY55 and BDY56 are mounted in TO-3 metal package. LF Large Signal Power Amplification High .

    BDY55 - NPN Transistor (INCHANGE)
    isc Silicon NPN Power Transistor BDY55 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC = 4A ·Collector-Emitter Saturatio.

    BDY55X - Bipolar NPN Device (Seme LAB)
    BDY55X Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN .

    BDY53 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage- : VC.

    BDY53 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
    NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Swi.

    BDY54 - Bipolar NPN Device (Seme LAB)
    BDY54 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

    BDY54 - SILICON NPN TRANSISTOR (TT)
    SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package • Ideally suited for Switching and Amplifier Applications • Screening Options.

    BDY54 - (BDY53 / BDY54) NPN SILICON TRANSISTORS (Comset Semiconductors)
    NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Swi.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts