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BDY55X Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

BDY55X General Description

*Excellent Safe Operating Area *DC Current Gain- : hFE=20-100@IC = 4A *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for general-purpose switching an.

BDY55X Datasheet (207.40 KB)

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Datasheet Details

Part number:

BDY55X

Manufacturer:

Inchange Semiconductor

File Size:

207.40 KB

Description:

Silicon npn power transistor.

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BDY55X Silicon NPN Power Transistor Inchange Semiconductor

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