BDY58A
Seme LAB
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Bipolar npn device.
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BDY58 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Sat.
BDY58 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY57 BDY58
..
DESCRIPTION ·With TO-3 package ·High c.
BDY58 - NPN SILICON TRANSISTORS
(Comset Semiconductors)
NPN BDY57 – BDY58 SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package. LF Large Signal Power Amplification High C.
BDY58 - HIGH CURRENT NPN SILICON TRANSISTOR
(Seme LAB)
BDY58
MECHANICAL DATA Dimensions in mm
4 0 .0 1 (1 .5 7 5 ) M ax.
2 2 .2 3 (0 .8 7 5 ) M ax.
1 .5 7 (0 .0 6 2 ) 1 .4 7 (0 .0 5 8 )
D ia .
3 0 .4 0 (.
BDY58C - Bipolar NPN Device
(Seme LAB)
BDY58C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BDY58S - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 125V(Min) ·High Power Dissipation ·Low Collector Sat.
BDY58S - Bipolar NPN Device
(Seme LAB)
BDY58S
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BDY53 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)=60V(Min.) ·Collector-Emitter Saturation Voltage-
: VC.
BDY53 - (BDY53 / BDY54) NPN SILICON TRANSISTORS
(Comset Semiconductors)
NPN BDY53 – BDY54 SILICON TRANSISTORS, DIFFUSED MESA
They are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Swi.
BDY54 - Bipolar NPN Device
(Seme LAB)
BDY54
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .