BDY23
Seme LAB
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Bipolar npn device.
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BDY20 - Bipolar NPN Device
(Seme LAB)
BDY20
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDY20 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain
-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage.
BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
(Comset Semiconductor)
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABS.
BDY23 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
BDY23
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage.
BDY23A - Bipolar NPN Device
(Seme LAB)
BDY23A
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BDY23B - Bipolar NPN Device
(Seme LAB)
BDY23B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BDY23C - Bipolar NPN Device
(Seme LAB)
BDY23C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.
BDY24 - (BDY23 - BDY25)NPN SILICON TRANSISTORS
(Comset Semiconductor)
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABS.
BDY24 - Silicon NPN Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
BDY24
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage.
BDY24B - Bipolar NPN Device
(Seme LAB)
BDY24B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN.