BDY26C Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BDY26C .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 0. High S.

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Datasheet Specifications

Part number: BDY26C
Manufacturer: Inchange Semiconductor
File Size: 207.06 KB
Datasheet: BDY26C-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A

BDY26C Distributors

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BDY26C Silicon NPN Power Transistor Inchange Semiconductor

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