BDY26A Datasheet, Transistor, Seme LAB

BDY26A Features

  • Transistor
  • HIGH SWITCHING CURRENTS HIGH RELIABILITY CECC SCREENING OPTIONS SPACE QUALITY LEVELS OPTIONS JAN LEVEL SCREENING OPTIONS 38.61 (1.52)

PDF File Details

Part number:

BDY26A

Manufacturer:

Seme LAB

File Size:

98.19kb

Download:

📄 Datasheet

Description:

High current npn silicon transistor.

Datasheet Preview: BDY26A 📥 Download PDF (98.19kb)
Page 2 of BDY26A

BDY26A Application

  • Applications
  • SWITCHING REGULATORS LINEAR APPLICATIONS TO3 (TO204AA) Pin 1 = Base Pin 2 = Emitter Case = Collector www.DataSheet

TAGS

BDY26A
HIGH
CURRENT
NPN
SILICON
TRANSISTOR
Seme LAB

📁 Related Datasheet

BDY26 - NPN SILICON TRANSISTORS (Comset Semiconductor)
BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2 NPN SILICON TRANSISTORS, DIFFUSED MESA. They are NPN transistors mounted in Jedec TO-3. LF Large Signal Powe.

BDY26 - NPN Transistor (INCHANGE)
isc Silicon NPN Power Transistor BDY26 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltag.

BDY26B - HIGH CURRENT NPN SILICON TRANSISTOR (Seme LAB)
BDY26B MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) .

BDY26C - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BDY26C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Volta.

BDY26C - HIGH CURRENT NPN SILICON TRANSISTOR (Seme LAB)
BDY26C MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) .

BDY20 - Bipolar NPN Device (Seme LAB)
BDY20 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY20 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage.

BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.

BDY23 - Bipolar NPN Device (Seme LAB)
BDY23 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

BDY23 - Silicon NPN Power Transistor (Inchange Semiconductor)
isc Silicon NPN Power Transistor BDY23 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts