Seme LAB manufacturer logo Part number: BDY26B Manufacturer: Seme LAB File Size: 98.18 KB Download: 📄 Datasheet Description: High current npn silicon transistor.
BDY26 Datasheet PDF BDY26, Comset Semiconductor BDY26 – 183T2 BDY27 – 184T2 BDY28 – 185T2 NPN SILICON TRANSISTORS, DIFFUSED MESA. They are NPN transistors mounted in Jedec TO-3. LF Large Signal Powe.
BDY26 Datasheet PDF BDY26, INCHANGE isc Silicon NPN Power Transistor BDY26 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Voltag.
BDY26A Datasheet PDF BDY26A, Seme LAB BDY26A MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) .
BDY26C Datasheet PDF BDY26C, Inchange Semiconductor isc Silicon NPN Power Transistor BDY26C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·Collector-Emitter Saturation Volta.
BDY26C Datasheet PDF BDY26C, Seme LAB BDY26C MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) .
BDY20 Datasheet PDF BDY20, Seme LAB BDY20 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .
BDY20 Datasheet PDF BDY20, Inchange Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage.
BDY23 Datasheet PDF BDY23, Comset Semiconductor BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.
