Datasheet4U Logo Datasheet4U.com

BDY58 - NPN Transistor

📥 Download Datasheet

Preview of BDY58 PDF
datasheet Preview Page 2

Datasheet Details

Part number BDY58
Manufacturer INCHANGE
File Size 203.05 KB
Description NPN Transistor
Datasheet download datasheet BDY58-INCHANGE.pdf

BDY58 Product details

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min) High Power Dissipation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS LF signal power amplification. High current fast switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 160 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 10 V IC Collector Cu

📁 BDY58 Similar Datasheet

  • BDY58A - Bipolar NPN Device (Seme LAB)
  • BDY58C - Bipolar NPN Device (Seme LAB)
  • BDY58S - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BDY53 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • BDY54 - Bipolar NPN Device (Seme LAB)
  • BDY55 - SILICON POWER TRANSISTOR (SavantIC)
  • BDY55X - Bipolar NPN Device (Seme LAB)
  • BDY56 - SILICON POWER TRANSISTOR (SavantIC)
Other Datasheets by INCHANGE
Published: |