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BDY27 NPN Transistor

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Description

isc Silicon NPN Power Transistor BDY27 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 0. High S.

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Datasheet Specifications

Part number
BDY27
Manufacturer
INCHANGE
File Size
207.28 KB
Datasheet
BDY27-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current 3 A

BDY27 Distributors

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NPN Transistor INCHANGE
INCHANGE BDY27-like datasheet