BDY26 Datasheet, Transistor, INCHANGE

PDF File Details

Part number:

BDY26

Manufacturer:

INCHANGE

File Size:

207.37kb

Download:

📄 Datasheet

Description:

Npn transistor.

  • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.)
  • Collector-Emitter Saturation Voltage- : VCE(sat)= 0.6V(

  • Datasheet Preview: BDY26 📥 Download PDF (207.37kb)
    Page 2 of BDY26

    BDY26 Application

    • Applications
    • Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO C

    TAGS

    BDY26
    NPN
    Transistor
    INCHANGE

    📁 Related Datasheet

    BDY20 - Bipolar NPN Device (Seme LAB)
    BDY20 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

    BDY20 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage.

    BDY23 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
    BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.

    BDY23 - Bipolar NPN Device (Seme LAB)
    BDY23 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN .

    BDY23 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor BDY23 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector-Emitter Saturation Voltage.

    BDY23A - Bipolar NPN Device (Seme LAB)
    BDY23A Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

    BDY23B - Bipolar NPN Device (Seme LAB)
    BDY23B Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

    BDY23C - Bipolar NPN Device (Seme LAB)
    BDY23C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN.

    BDY24 - (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)
    BDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA LF Large Signal Power Amplification High Current Fast Switching ABS.

    BDY24 - Silicon NPN Power Transistor (Inchange Semiconductor)
    isc Silicon NPN Power Transistor BDY24 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage.

    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts