BDY29 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 75V (Min). Low Collector-Emitter Saturation Voltage. Excellent Safe Operating Area.

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Datasheet Specifications

Part number: BDY29
Manufacturer: INCHANGE
File Size: 199.54 KB
Datasheet: BDY29-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high power ,high current and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A IB

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BDY29 NPN Transistor INCHANGE

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