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BDY29 - NPN Transistor

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Datasheet Details

Part number BDY29
Manufacturer INCHANGE
File Size 199.54 KB
Description NPN Transistor
Datasheet download datasheet BDY29-INCHANGE.pdf

BDY29 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 75V (Min) Low Collector-Emitter Saturation Voltage Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power ,high current and switching applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 75 V VEBO Emitter-Base Voltage 7

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