BDY37 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min). Low Collector-Emitter Saturation Voltage. Excellent Safe Operating Area.

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Datasheet Specifications

Part number: BDY37
Manufacturer: INCHANGE
File Size: 200.11 KB
Datasheet: BDY37-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power audio, disk head positioners, linear amplifiers, switching regulators,solenoid drivers,and DC-DC converters or inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO

BDY37 Distributors

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BDY37 NPN Transistor INCHANGE

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