BDY39 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BDY39 .
Excellent Safe Operating Area. DC Current Gain- : hFE=25-100@IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 0.

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Datasheet Specifications

Part number: BDY39
Manufacturer: INCHANGE
File Size: 203.25 KB
Datasheet: BDY39-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in high power AF output stages and in stabilized power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage

BDY39 Distributors

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BDY39 NPN Transistor INCHANGE

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