BDY58S Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 125V(Min). High Power Dissipation. Low Collector Saturation Voltage. Minimum Lot-t.

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Datasheet Specifications

Part number: BDY58S
Manufacturer: Inchange Semiconductor
File Size: 207.21 KB
Datasheet: BDY58S-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* LF signal power amplification.
* High current fast switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 160 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 25 A IB Base

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BDY58S Silicon NPN Power Transistor Inchange Semiconductor

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