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BDY23

Silicon NPN Power Transistor

BDY23 General Description


*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.)
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2A
*High Switching Speed
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for LF signal powe am.

BDY23 Datasheet (211.60 KB)

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Datasheet Details

Part number:

BDY23

Manufacturer:

Inchange Semiconductor

File Size:

211.60 KB

Description:

Silicon npn power transistor.

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