Datasheet4U Logo Datasheet4U.com

BDY23 Datasheet - Inchange Semiconductor

BDY23 Silicon NPN Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) *Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 2A *High Switching Speed *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for LF signal powe am.

BDY23_InchangeSemiconductor.pdf

Preview of BDY23 PDF
BDY23 Datasheet Preview Page 2

Datasheet Details

Part number:

BDY23

Manufacturer:

Inchange Semiconductor

File Size:

211.60 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

BDY20 Bipolar NPN Device (Seme LAB)

BDY20 Silicon NPN Power Transistor (Inchange Semiconductor)

BDY23 (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)

BDY23 Bipolar NPN Device (Seme LAB)

BDY23A Bipolar NPN Device (Seme LAB)

BDY23B Bipolar NPN Device (Seme LAB)

BDY23C Bipolar NPN Device (Seme LAB)

BDY24 (BDY23 - BDY25)NPN SILICON TRANSISTORS (Comset Semiconductor)

TAGS

BDY23 BDY23 Silicon NPN Power Transistor Inchange Semiconductor

BDY23 Distributor