BDY23 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BDY23 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Collector-Emitter Saturation Voltage- : VCE(sat)= 1. High Sw.

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Datasheet Specifications

Part number: BDY23
Manufacturer: Inchange Semiconductor
File Size: 211.60 KB
Datasheet: BDY23_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for LF signal powe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A IB Base Current PC Co

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BDY23 Silicon NPN Power Transistor Inchange Semiconductor

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