BDY20 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Excellent Safe Operating Area. DC Current Gain -hFE=20-70@IC = 4A. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

📥 Download Datasheet

BDY20 Datasheet Preview — Preview of BDY20 PDF

Datasheet Specifications

Part number: BDY20
Manufacturer: Inchange Semiconductor
File Size: 208.49 KB
Datasheet: BDY20-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A IB Base

BDY20 Distributors

📁 Related Datasheet

BDY23 BDY23A BDY23B BDY23C BDY24 BDY24B

📌 All Tags

BDY20 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BDY20-like datasheet