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BDY20

Silicon NPN Power Transistor

BDY20 General Description


*Excellent Safe Operating Area
*DC Current Gain -hFE=20-70@IC = 4A
*Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1V(Max)@ IC = 4A
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for general-purpose switching and am.

BDY20 Datasheet (208.49 KB)

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Datasheet Details

Part number:

BDY20

Manufacturer:

Inchange Semiconductor

File Size:

208.49 KB

Description:

Silicon npn power transistor.

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