SW51x
Connor-Winfield Corporation
83.38kb
(sw51x - sw53x) 14 pin dip high speed sinewave.
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SW5104 - Infrared remote control transmitter circuit
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SW5104
z z z z LED z EMC、ESD z CMOS z 2.0 - 5.0V
z z z z z
z -0.3 - 5.5V z / Vss-0.3 - VDD+0.3 z 500mw z -10℃~70℃ z -40℃~ 125℃
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SW5106 - Wireless charging transmitter fully integrated SOC
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SOC
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SW5106 15W SOC ， ， 32 MCU、ADC、Timer、ASK 、H IO ，，。
2.
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3.
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15W AVIN 2.7~13V PVIN 2~13V
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SW5123 - RF front-end chip
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SW5123 2016 04 V1.0
2.4GHz
：2.1 mA； （）：1.70 dB； （）：12.0 dB； （）：1.40 dB； 1dB （）：+13.5 dBm； PCB ，
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SW50CPF06 - Diode
(SEMIPOWER)
SAMWIN
SW50CPF06
DIODE
Features
■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current .
SW50N06 - N-Channel MOSFET
(Sammwin)
..
SAMWIN
Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 60 V : 0.023ohm : 50 A : 30 nc .
SW50N06A - N-channel MOSFET
(SAMWIN)
SAMWIN
SW50N06A
N-channel MOSFET
BVDSS : 60V ID : 50A RDS(ON) : 0.023ohm
2 2 3 1 3
Features
■ High ruggedness ■ RDS(ON) (Max 0.023Ω)@VGS=10V ■ Gate .
SW50N06T - MOSFET
(SEMIPOWER)
SAMWIN
SW50N06T
N-channel D-PAK/TO-220 MOSFET
Features
■ High ruggedness ■ RDS(ON) (Max 16.8mΩ)@VGS=10V ■ Gate Charge (Typ 41nC) ■ Improved dv/dt C.
SW50N10 - MOSFET
(SEMIPOWER)
SAMWIN
SW50N10
N-channel TO-220 MOSFET
Features
TO-220
■ High ruggedness ■ RDS(ON) (Max17mΩ)@VGS=10V ■ Gate Charge (Typical 82nC) ■ Improved dv/d.
