VBLD861 Datasheet, vcxo equivalent, Connor-Winfield

VBLD861 Features

  • Vcxo
  • 3.3 Vdc Operation
  • Pull Range: ±20ppm
  • Temperature Range Options: 0 to 85°C, 0 to 70°C, -40 to 85°C, and -20 to 70°C
  • Low Jitter: 6

PDF File Details

Part number:

VBLD861

Manufacturer:

Connor-Winfield

File Size:

374.34kb

Download:

📄 Datasheet

Description:

Ultra low phase noise vcxo. The Connor-Winfield RoHS compliant VBLD861 is a 3.3V Voltage Controlled Crystal Oscillator (VCXO) with LVCMOS output. The VBLD861 is

Datasheet Preview: VBLD861 📥 Download PDF (374.34kb)
Page 2 of VBLD861 Page 3 of VBLD861

TAGS

VBLD861
Ultra
Low
Phase
Noise
VCXO
Connor-Winfield

📁 Related Datasheet

VBL1102N - Power MOSFET (VBsemi)
VBNC1102N / VBL1102N Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 100 VGS = 10 V.

VBL1201N - N-Channel MOSFET (VBsemi)
VBL1201N .VBsemi. N-Channel 200 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) Typ. ( ) at VGS = 10 V RDS(on) Typ. ( ) at VGS = 7.5 .

VBL1202M - Power MOSFET (VBsemi)
VBL1202M Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 200 VGS = 10 V 70 13 39 Single 0.18 FEATU.

VBL1206N - N-Channel MOSFET (VBsemi)
VBL1206N N-Channel 200 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.050 at VGS = 10 V 0.060 at VGS = 6.5 V .

VBL1252M - Power MOSFET (VBsemi)
VBL1252M Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 250 VGS = 10 V 68 11 35 Single 0.23 FEATU.

VBL1303 - N-Channel MOSFET (VBsemi)
VBNC1303 / VBL1303 N-Channel 30-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0024 at VGS = 10 V 0.0027 at VGS = 4.5 V I.

VBL1405 - N-Channel MOSFET (VBsemi)
VBL1405/VBNC1405 N-Channel 45-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0057 at VGS = 10 V 45 0.0060 at VGS = 4.5 V .

VBL15R22S - N-Channel MOSFET (VBsemi)
VBL15R22S .VBsemi. N-Channel 500V (D-S) Super unction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) 500 VGS = 10 V .

VBL1603 - N-Channel MOSFET (VBsemi)
VBL1603 PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration .VBsemi. N-Channel 60 V (D-S) MOSFET.

VBL1606 - N-Channel MOSFET (VBsemi)
VBL1606 N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 4 m 150 A Single FEATURES • TrenchFET® pow.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts