CSB1370

PNP Silicon Epitaxial Power Transistor

CSB1370 General Description

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specif.

CSB1370 Datasheet (89.40 KB)

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Datasheet Details

Part number:

CSB1370

Manufacturer:

Continental Device

File Size:

89.40 KB

Description:

Pnp silicon epitaxial power transistor.
Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 IS / IECQC 700000 IS / IECQC 750100.

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CSB1370 PNP Silicon Epitaxial Power Transistor Continental Device

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CSB1370 General Description

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